Potassium fluoride,anhydrous
           Potassium fluoride,extra pure
           Potassium fluoride,Granular
           Silicon Dioxide
           Hydrofluoric acid
           Synthetic Cryolite
           Potassium Fluoaluminate
           Ammonium bifluoride
           Potassium Bifluoride
           Aluminium fluoride
           Sodium fluoride
           Potassium Fluorosilicate
           Fluorosilicic Acid
           Sodium silicofluoride
           Potassium Hydroxide Flakes
           Magnesium Fluoride
           Magnesium fluorosilicate
           Barium Fluoride
  News Center

Business community June 23 hearing: Hydrofluoric acid and polytetrafluoroethylene Goods parity index June 22 to 238.59, yesterday rose 0.17 points, a record high cycle, compared with February 19, 2012 the lowest point of 98.85 points, up 141.37 percent. (Note: refers to the period since 2012-01-01)

Note: The business community is defined, based on a given parity index indexation results downstream commodity daily price ratio for the cycle.

According to the business community data, the reference price of 6540.00 that day hydrofluoric acid, starting from 2016-1-18, 157 days after another rose 9.703 percent. PTFE day downstream commodity reference price of 

45000.00 from 2016-5-25 since 29 days have decreased by 0.614%.

(Source: Business News Agency)

(The content provided in this news can not be guaranteed and assured to be accurate, appropriate for all,  and our company can not be held responsible for any error or negligence derived therefrom.)

The etching of silicate glasses in aqueous hydrofluoric acid solutions is applied in many technological fields. In this review most of the aspects of the wet chemical etching process of silicate glasses are discussed. The mechanism of the dissolution reaction is governed by the adsorption of the two reactive species: HF and HF 2 - and the catalytic action of H+ ions, resulting in the breakage of the siloxane bonds in the silicate network. The etch rate is determined by the composition of the etchant as well as by the glass, although the mechanism of dissolution is not influenced. In the second part of this review, diverse applications of etching glass objects in technology are described. Etching of SiO2 and doped SiO2 thin films, studied extensively for integrated circuit technology, is discussed separately.

Anodic dissolution of n+‐, n‐, and n?‐type silicon in 5% aqueous hydrofluoric acid at moderate current densities results in the formation of etch channels which propagate in crystal‐oriented directions in the monocrystal. Density and depth of the channels are a function of the applied voltage, the donor concentration, and the exposure time of the electrolyte under anodic bias conditions.